Equipment : Plasma-Therm Versaline ICP RIE


  • Typically used for etching aluminum and aluminum nitride
  • 500 W RF power supply
  • 4" wafers or smaller samples mounted to 4" carrier wafers

Note: Staff approval must be given EVERY TIME this machine is to be used.

Available Gases: Cl2, BCl3, Ar, O2.

Please consult Nanofab staff for process specifics.