Carnegie Mellon University

Elionix ELS-G100 Electron Beam Lithography System

  • 100kV and capable of patterning features down to 5 nm with high alignment accuracy (20nm or better) and over large wafer area
  • Beam currents up to 100nA for high throughput on wafers up to 6”
Please consult Nanofab staff for process specifics.