Elionix ELS-G100 Electron Beam Lithography System

College of Engineering › Claire & John Bertucci Nanotechnology Laboratory › Facilities & Equipment › Elionix ELS-G100 Electron Beam Lithography System

Overview

100kV and capable of patterning features down to 5 nm with high alignment accuracy (20nm or better) and over large wafer area
Beam currents up to 100nA for high throughput on wafers up to 6”

Please consult Nanofab staff for process specifics.